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DSS4140V
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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Features
* * * * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (DSS5140V) Low Collector-Emitter Saturation Voltage, VCE(SAT) Surface Mount Package Suited for Automated Assembly Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 1) "Green Device" (Note 2)
Mechanical Data
* * * * * * * Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.003 grams (approximate)
NEW PRODUCT
1, 2, 5, 6 3 4
Top View Bottom View Device Schematic
6
5
4
1
2
3
Pin Out Configuration
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC ICRP ICM IB IBM Value 40 40 5 1 2 3 300 1 Unit V V V A A A mA A
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Repetitive Peak Collector Current (Note 3) Peak Pulse Collector Current Base Current (DC) Peak Base Current
Thermal Characteristics
Characteristic Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25C Operating and Storage Temperature Range
Notes: 1. 2. 3. 4.
Symbol PD RJA TJ, TSTG
Value 600 208 -55 to +150
Unit mW C/W C
No purposefully added lead. Diode's Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Operated under pulsed conditions: Pulse width 30ms; duty cycle 0.2. Device mounted on FR-4 PCB with minimum recommended pad layout.
DSS4140V
Document number: DS31655 Rev. 2 - 2
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DSS4140V Electrical Characteristics
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO Min 40 40 5 300 300 200 75 150 Typ 58 30 28 375 350 25 Max 100 50 100 100 900 80 110 190 440 190 1.2 1.1 10 Unit V V V nA A nA nA Test Condition IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 150C VCE = 40V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA VCE = 5V, IC = 500mA VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 2A, IB = 200mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA VCE = 5V, IC = 1A VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain
NEW PRODUCT
hFE
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
Notes:
VCE(SAT) RCE(SAT) VBE(SAT) VBE(ON) Cobo fT ton td tr toff ts tf
mV m V V pF MHz ns ns ns ns ns ns
VCC = 10V IC = 0.5A, IB1 = IB2 = 25mA
5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
600
10
Pw = 1ms
PD, POWER DISSIPATION (mW)
500
IC, COLLECTOR CURRENT (A) 1
Pw = 10ms
400
300
0.1
Pw = 100ms DC
200
0.01
100
RJA = 208C/W
0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4) 150
0.001 0.1 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 4)
DSS4140V
Document number: DS31655 Rev. 2 - 2
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DSS4140V
1,600 1,400 hFE, DC CURRENT GAIN 1,200 1,000 800 600 400
TA = -55C TA = 150C VCE = 5V
1
IC/IB = 10
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.1
TA = 150C TA = 85C T A = 25C
TA = 85C
TA = 25C
0.01
NEW PRODUCT
T A = -55C
200 0 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2
VCE = 5V
1
0.001 0.1
1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.2
IC/IB = 10
1.0
1.0
0.8
T A = -55C
0.8
TA = -55C
0.6
T A = 25C
0.6
TA = 25C
0.4
TA = 85C
0.4
TA = 85C
0.2
T A = 150C
0.2 0 0.1
T A = 150C
0 0.1
1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current
1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current
200
160 CAPACITANCE (pF)
f = 1MHz
120
80
Cibo
40
Cobo
0 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics
DSS4140V
Document number: DS31655 Rev. 2 - 2
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(c) Diodes Incorporated
DSS4140V
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05
D = 0.9
D = 0.02
RJA(t) = r(t) * RJA R JA = 180C/W P(pk)
NEW PRODUCT
0.01
D = 0.01 D = 0.005
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
D = Single Pulse
0.001 0.00001
0.0001
0.001
0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 8 Transient Thermal Response (Note 4)
100
1,000
10,000
Ordering Information
Part Number DSS4140V-7
Notes:
(Note 6) Case SOT-563 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZN6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)
ZN6
YM
Date Code Key Year Code Month Code
2008 V Jan 1 Feb 2
2009 W Mar 3
2010 X Apr 4 May 5
2011 Y Jun 6
2012 Z Jul 7 Aug 8
2013 A Sep 9
2014 B Oct O Nov N
2015 C Dec D
Package Outline Dimensions
A
B
C
D G
K
M
SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm
H L
DSS4140V
Document number: DS31655 Rev. 2 - 2
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March 2009
(c) Diodes Incorporated
DSS4140V Suggested Pad Layout
C2 C2
Z
G
C1
Y
NEW PRODUCT
Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5
X
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DSS4140V
Document number: DS31655 Rev. 2 - 2
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March 2009
(c) Diodes Incorporated

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